• AEC Q100 Qualified
• 4A Peak Source/Sink Drive Current
• Wide Operating Voltage Range: 4.5V to 35V
• AEC Q100 Grade 1: -40°C to +125°C Operating Temperature Range
• Logic Input Withstands Negative Swing of up to 5V
• Outputs May be Connected in Parallel for Higher Drive Current
• Matched Rise and Fall Times
• Low Propagation Delay Time
• Low 10µA Supply Current
• Low Output Impedance

These devices, offered in an 8-pin SOIC package and in an 8-pin Power SOIC package with an exposed metal back, are fully qualified for automotive use per requirements of AEC Q100.

IXD_604SI & SIA (Data Sheet Rev 1)
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The IXDD604SI & SIA / IXDF604SI & SIA / IXDI604SI & SIA / IXDN604SI & SIA dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each of the two outputs can source and sink 4A of peak current while producing voltage rise and fall times of less than 10ns. The input of each driver is virtually immune to latch up, and proprietary circuitry eliminates cross conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make these devices ideal for high-frequency and high-power applications.

The IXDD604SI&SIA are dual non-inverting drivers with enables; the IXDF604SI&SIA has one inverting driver and one non-inverting driver; the IXDI604SI&SIA are dual inverting drivers; and the IXDN604SI&SIA are dual non-inverting drivers.

• AEC Q100 Qualified
• 9A Peak Source/Sink Drive Current
• Wide Operating Voltage Range: 4.5V to 35V
• AEC Q100 Grade 1: -40°C to +125°C Operating Temperature Range
• Logic Input Withstands Negative Swing of up to 5V
• Matched Rise and Fall Times
• Low Propagation Delay Time
• Low 10µA Supply Current
• Low Output Impedance

These devices, in an 8-pin Power SOIC package with an exposed metal back, are fully qualified for automotive use per requirements of AEC Q100.

IXD_609SI (Data Sheet Rev 1)
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The IXDD609SI / IXDI609SI / IXDN609SI high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. The IXD_609SI high-current output can source and sink 9A of peak current while producing voltage rise and fall times of less than 25ns. The input is CMOS compatible, and is virtually immune to latch up. Proprietary circuitry eliminates cross-conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the IXD_609SI family ideal for high-frequency and high-power applications.

The IXDD609SI is configured as a non-inverting driver with an enable, the IXDI609SI is configured as an inverting driver, and the IXDN609SI is configured as a non-inverting driver.