Depletion Mode MOSFET Devices Clare's N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in Clare's solid state relays for industrial and telecommunications applications. |
Features: |
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• Device Normally On |
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Applications: |
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• Normally On Switches • Ignition Modules • Power Supplies • Telecommunications • Support for Clare's LITELINK Devices |
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Clare FETs
| Part Number |
Data Sheet Revision | BVDSX (V) |
RDS(on) (Ohms) |
VGS(off) ( Min V) |
VGS(off) (Max V) |
IDSS (Min mA) |
Package | Comments |
|---|---|---|---|---|---|---|---|---|
| CPC3701 | 1 | 60 | 1 | -0.8 | -2.9 | 600 | SOT-89 | Low RDS(on), High IDSS |
| CPC3703 | 3 | 250 | 4 | -1.6 | -3.9 | 300 | SOT-89 | Low RDS(on) |
| CPC3710 | B | 250 | 10 | -1.6 | -3.9 | 220 | SOT-89 | - |
| CPC3714 | B | 350 | 14 | -1.6 | -3.9 | 240 | SOT-89 | High BVDSX |
| CPC3720 | B | 350 | 22 | -1.6 | -3.9 | 130 | SOT-89 | High BVDSX |
| CPC3730 | C | 350 | 30 | -1.6 | -3.9 | 140 | SOT-89 | High BVDSX |
| CPC5602 | 6 | 350 | 14 | -2 | -3.6 | 130 | SOT-223 | High BVDSX |
| CPC5603 | 4 | 415 | 14 | -2 | -3.6 | 130 | SOT-223 | High BVDSX |